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1

Characterization of V T -instability in enhancement-mode Al 2 O 3 -AlGaN/GaN MIS-HEMTs

Lu, Yunyou, Yang, Shu, Jiang, Qimeng, Tang, Zhikai, Li, Baikui, Chen, Kevin J.

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 347 KB

english, 2013

2

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates

Qimeng Jiang,, Cheng Liu,, Yunyou Lu,, Chen, Kevin J.

Year:

2013

Language:

english

File:

PDF, 837 KB

english, 2013

3

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Yang, Shu, Liu, Shenghou, Lu, Yunyou, Liu, Cheng, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.00 MB

english, 2015

4

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

Liu, Cheng, Wang, Hanxing, Yang, Shu, Lu, Yunyou, Liu, Shenghou, Tang, Zhikai, Jiang, Qimeng, Huang, Sen, Chen, Kevin J.

Year:

2015

File:

PDF, 634 KB

2015

5

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Hua, Mengyuan, Liu, Cheng, Yang, Shu, Liu, Shenghou, Lu, Yunyou, Fu, Kai, Dong, Zhihua, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Year:

2015

Language:

english

File:

PDF, 407 KB

english, 2015

6

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Impact of Vth shift on Ron in E/D-mode GaN-on-Si power transistors: Role of dynamic stress and gate overdrive

Yang, Shu, Lu, Yunyou, Liu, Shenghou, Wang, Hanxing, Liu, Cheng, Chen, Kevin J.

Year:

2016

Language:

english

File:

PDF, 947 KB

english, 2016

7

[IEEE 2019 IEEE International Conference on Prognostics and Health Management (ICPHM) - San Francisco, CA, USA (2019.6.17-2019.6.20)] 2019 IEEE International Conference on Prognostics and Health Management (ICPHM) - A Data-Based Approach for Sensor Fault Detection and Diagnosis of Electro-Pneumatic Brake

Lu, Yunyou, Fan, Xiaoping, Gao, Dianzhu, Cheng, Yijun, Yang, Yingze, Zhang, Xiaoyong, Li, Shuo, Peng, Jun

Year:

2019

File:

PDF, 614 KB

2019

8

[IEEE 2018 IEEE CSAA Guidance, Navigation and Control Conference (GNCC) - Xiamen, China (2018.8.10-2018.8.12)] 2018 IEEE CSAA Guidance, Navigation and Control Conference (CGNCC) - Hardware-in-the-Loop Simulation System for Guided Bombs

Yang, Chenglong, Guo, Hongwu, Jiang, Taowen, Lu, Yunyou, Zhang, Maohua

Year:

2018

File:

PDF, 3.46 MB

2018

9

A novel spectrofluorimetric method for determination of lomefloxacin based on supramolecular inclusion complex between it and p-sulfonated calyx[4]arene

Yunyou Zhou, Qin Lu, Chun Liu, Shike She, Lun Wang

Journal:

Analytica Chimica Acta

Year:

2005

Language:

english

File:

PDF, 316 KB

english, 2005

10

Study on the inclusion behavior of p-sulphonatocalix[4]arene with 9-amino-acridine by spectrofluorometric titrations

Yunyou Zhou, Qin Lu, Chun Liu, Shike She, Lun Wang

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2006

Language:

english

File:

PDF, 188 KB

english, 2006

11

Spectrofluorimetric study on the inclusion interaction between lomefloxacin and p-sulfonated calix[4]arene and its analytical application

Yunyou Zhou, Qin Lu, Chun Liu, Shike She, Lun Wang

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2006

Language:

english

File:

PDF, 459 KB

english, 2006

12

Study on the fluorescence behavior of p-sulfonated calix[4,6]arene in cationic surfactant cetyltrimethylammonium bromide solution and its analytical application

Yunyou Zhou, Chun Liu, Hongwei Xu, Huapeng Yu, Qin Lu, Lun Wang

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2007

Language:

english

File:

PDF, 577 KB

english, 2007

13

Study on the inclusion interaction of p-sulfonated calix[n]arenes with Vitamin K3 using methylene blue as a spectral probe

Qin Lu, Jiashan Gu, Huapeng Yu, Chun Liu, Lun Wang, Yunyou Zhou

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2007

Language:

english

File:

PDF, 595 KB

english, 2007

14

Spectrofluorometric study on the inclusion behavior of p-(p-carboxyl benzeneazo) calix[4]arene with norfloxacin

Yunyou Zhou, Hongwei Xu, Huapeng Yu, Liu Chun, Qin Lu, Lun Wang

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2008

Language:

english

File:

PDF, 434 KB

english, 2008

15

Spectrofluorimetric study on the inclusion interaction between vitamin K3 with p-(p-sulfonated benzeneazo)calix[6]arene and determination of VK3

Yunyou Zhou, Hongwei Xu, Lian Wu, Chun Liu, Qin Lu, Lun Wang

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2008

Language:

english

File:

PDF, 393 KB

english, 2008

16

Spectrofluorometric studies on the interaction between oxacalix[6]arene-locked trizinc(II)porphyrins and crystal violet

Lian Wu, Lijuan Jiao, Qin Lu, Erhong Hao, Yunyou Zhou

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

2009

Language:

english

File:

PDF, 486 KB

english, 2009

17

Determination of Proteins at Nanogram Levels Using the Resonance Light Scattering Technique with a Novel PVAK Nanoparticle

Yunyou Zhou, Shike She, Li Zhang, Qin Lu

Journal:

Microchimica Acta

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

18

Host properties of cucurbit [7] uril: fluorescence enhancement of acridine orange

Yunyou Zhou, Huapeng Yu, Li Zhang, Junyong Sun, Lian Wu, Qin Lu, Lun Wang

Journal:

Journal of Inclusion Phenomena and Macrocyclic Chemistry

Year:

2008

Language:

english

File:

PDF, 426 KB

english, 2008

19

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

Jiang, Qimeng, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 537 KB

english, 2013

20

A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Jiang, Qimeng, Tang, Zhikai, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

21

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Tang, Zhikai, Jiang, Qimeng, Lu, Yunyou, Huang, Sen, Yang, Shu, Tang, Xi, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 646 KB

english, 2013

22

A Preliminary Investigation of the Complexation of Dopamine by p ‐Sulfonated Calix[4, 6] Arene and β‐Cyclodextrin Using Fluorescence Spectrometry

Zhou, Yunyou, Liu, Chun, Yu, Huapeng, Xu, Hongwei, Lu, Qin, Wang, Lun

Journal:

Spectroscopy Letters

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

23

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

Yang, Shu, Tang, Zhikai, Wong, King-Yuen, Lin, Yu-Syuan, Lu, Yunyou, Huang, Sen, Chen, Kevin J.

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

24

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

Tang, Zhikai, Jiang, Qimeng, Huang, Sen, Lu, Yunyou, Yang, Shu, Liu, Cheng, Tang, Xi, Liu, Shenghou, Li, Baikui, Chen, Kevin J.

Year:

2013

Language:

english

File:

PDF, 378 KB

english, 2013

25

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

Yang, Shu, Tang, Zhikai, Wong, King-Yuen, Lin, Yu-Syuan, Liu, Cheng, Lu, Yunyou, Huang, Sen, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 3.92 MB

english, 2013

26

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Yang, Shu, Liu, Shenghou, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.63 MB

english, 2014

27

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Lu, Yunyou, Li, Baikui, Tang, Xi, Jiang, Qimeng, Yang, Shu, Tang, Zhikai, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.74 MB

english, 2015

28

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Yang, Shu, Liu, Shenghou, Liu, Cheng, Tang, Zhikai, Lu, Yunyou, Chen, Kevin J.

Year:

2014

Language:

english

File:

PDF, 453 KB

english, 2014

29

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

30

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform

Baikui Li,, Xi Tang,, Jiang, Qimeng, Yunyou Lu,, Wang, Hanxing, Wang, Jiannong, Chen, Kevin J.

Year:

2014

Language:

english

File:

PDF, 549 KB

english, 2014

31

Preparation and Property Screening of the Solid Inclusion Complex of Norfloxacin with p-Sulfonated Calix[4]arene

Lu, Qin, Zhou, Yunyou, Sun, Junyong, Wu, Lian, Yu, Huapeng, Xu, Hongwei, Wang, Lun

Journal:

Combinatorial Chemistry & High Throughput Screening

Year:

2007

Language:

english

File:

PDF, 440 KB

english, 2007

32

Characterization of SiN x /AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Lu, Yunyou, Jiang, Qimeng, Tang, Zhikai, Yang, Shu, Liu, Cheng, Chen, Kevin J.

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 1.36 MB

english, 2015

33

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Wei, Jin, Liu, Shenghou, Li, Baikui, Tang, Xi, Lu, Yunyou, Liu, Cheng, Hua, Mengyuan, Zhang, Zhaofu, Tang, Gaofei, Chen, Kevin

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 414 KB

english, 2015

34

in GaN MIS-HEMTs

Yang, Shu, Lu, Yunyou, Wang, Hanxing, Liu, Shenghou, Liu, Cheng, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.55 MB

english, 2016

35

Compatibility of AlN/SiN x Passivation With LPCVD-SiN x Gate Dielectric in GaN-Based MIS-HEMT

Hua, Mengyuan, Lu, Yunyou, Liu, Shenghou, Liu, Cheng, Fu, Kai, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 845 KB

english, 2016

36

[IEEE 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Sendai, Japan (2015.8.26-2015.8.28)] 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices

Yang, Shu, Liu, Shenghou, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Year:

2015

Language:

english

File:

PDF, 351 KB

english, 2015

37

On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform

Tang, Xi, Li, Baikui, Lu, Yunyou, Chen, Kevin J.

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 392 KB

english, 2016

38

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015)

Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui

Journal:

physica status solidi (a)

Year:

2015

File:

PDF, 27.23 MB

2015

39

[IEEE 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Beijing, China (2016.11.15-2016.11.17)] 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET

Yang, Song, Tang, Zhikai, Lu, Yunyou, Jiang, Qimeng, Zhang, Anping, Chen, Kevin J.

Year:

2016

Language:

english

File:

PDF, 3.56 MB

english, 2016

40

Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques

Yang, Shu, Liu, Shenghou, Lu, Yunyou, Chen, Kevin J.

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.91 MB

english, 2017

41

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Yang, Song, Tang, Zhikai, Hua, Mengyuan, Zhang, Zhaofu, Wei, Jin, Lu, Yunyou, Chen, Kevin J.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

Language:

english

File:

PDF, 1.38 MB

english, 2020

42

An Iodine Balance Study to Assess the Current Recommended Nutrient Intake of Iodine in Chinese Young Adults

Yang, Lichen, Wang, Jun, Yang, Jianjun, Zhang, Huidi, Liu, Xiaobing, Mao, Deqian, Lu, Jiaxi, Gu, Yunyou, Li, Xiuwei, Wang, Haiyan, Xu, Jing, Tan, Hongxin, Zhang, Hongmin, Yu, Wei, Tao, Xiujuan, Fan, Y

Journal:

British Journal Of Nutrition

Year:

2020

File:

PDF, 744 KB

2020